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| STGW30N120KD 30 A - 1200 V - short circuit rugged IGBT Features Low on-losses High current capability Low gate charge Short circuit withstand time 10 s IGBT co-packaged with ultra fast free-wheeling diode 1 2 3 Application TO-247 Motor control Description This IGBT utilizes the advanced PowerMESHTM process resulting in an excellent trade-off between switching performance and low on-state behavior. Figure 1. Internal schematic diagram Table 1. Device summary Marking GW30N120KD Package TO-247 Packaging Tube Order code STGW30N120KD June 2008 Rev 2 1/13 www.st.com 13 Contents STGW30N120KD Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 4 5 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 STGW30N120KD Electrical ratings 1 Electrical ratings Table 2. Symbol VCES IC (1) IC (1) ICL (2) ICP (3) VGE tscw PTOT IF IFSM Tj 1. Absolute maximum ratings Parameter Collector-emitter voltage (VGE = 0) Collector current (continuous) at 25 C Collector current (continuous) at 100 C Turn-off latching current Pulsed collector current Gate-emitter voltage Short circuit withstand time, VCE = 0.5 V(BR)CES Tj = 125 C, RG = 10 , VGE = 12 V Total dissipation at TC = 25 C Diode RMS forward current at TC = 25 C Surge non repetitive forward current tp = 10 ms sinusoidal Operating junction temperature Value 1200 60 30 100 100 25 10 175 30 100 - 55 to 125 Unit V A A A A V s W A A C Calculated according to the iterative formula: T -T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------CC R xV (T , I ) THJ - C CESAT ( MAX ) C C 2. Vclamp = 80% of VCES, Tj =150 C, RG=10 , VGE=15 V 3. Pulse width limited by max. junction temperature allowed Table 3. Symbol Rthj-case Rthj-case Rthj-amb Thermal resistance Parameter Thermal resistance junction-case IGBT max. Thermal resistance junction-case diode max. Thermal resistance junction-ambient IGBT max. Value 0.57 1.6 50 Unit C/W C/W C/W 3/13 Electrical characteristics STGW30N120KD 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol Static Parameter Test conditions Min. Typ. Max. Unit Collector-emitter V(BR)CES breakdown voltage (VGE = 0) VCE(sat) VGE(th) ICES IGES gfs IC = 1 mA 1200 V VGE= 15 V, IC= 20 A Collector-emitter saturation VGE= 15 V, IC= 20 A, voltage Tc =125 C Gate threshold voltage Collector cut-off current (VGE = 0) Gate-emitter leakage current (VCE = 0) Forward transconductance VCE= VGE, IC= 1mA VCE =1200 V VCE =1200 V, Tc=125 C VGE = 20 V VCE = 25 V, IC= 20 A 4.5 2.8 2.7 3.85 V V 6.5 500 10 100 20 V A mA nA S Table 5. Symbol Cies Coes Cres Qg Qge Qgc Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions Min. Typ. 2520 170 33 105 21 56 Max. Unit pF pF pF nC nC nC VCE = 25 V, f = 1 MHz, VGE=0 VCE = 960 V, IC= 20 A,VGE=15 V 4/13 STGW30N120KD Electrical characteristics Table 6. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 960 V, IC = 20 A , RG= 10 VGE= 15 V, (see Figure 17) VCC = 960 V, IC = 20 A , RG= 10 VGE= 15 V, Tc= 125 C (see Figure 17) VCC = 960 V, IC = 20 A , RG= 10 VGE= 15 V, (see Figure 17) VCC = 960 V, IC = 20 A RG= 10 VGE= 15 V, , Tc= 125 C (see Figure 17) Min. Typ. 36 22 840 35 22 760 70 251 260 140 324 432 Max. Unit ns ns A/s ns ns A/s ns ns ns ns ns ns Table 7. Symbol Eon (1) Eoff (2) Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 960 V, IC = 20 A , RG= 10 VGE= 15 V, (see Figure 17) VCC = 960 V, IC = 20 A , RG= 10 VGE= 15 V, Tc= 125 C (see Figure 17) Min. Typ. 2.4 4.3 6.8 3.9 5.8 9.7 Max. Unit mJ mJ mJ mJ mJ mJ Ets Eon (1) Eoff (2) Ets 1. Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 17. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the same temperature (25C and 125C) 2. Turn-off losses include also the tail of the collector current Table 8. Symbol VF trr Qrr Irrm trr Qrr Irrm Collector-emitter diode Parameter Forward on-voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions IF = 20 A IF = 20 A, TC = 125 C IF = 20 A, VR = 45 V, di/dt = 100 A/s (see Figure 20) IF = 20 A, VR = 45 V, Tc = 125 C, di/dt = 100 A/s (see Figure 20) Min. Typ. 1.9 1.7 84 235 5.6 152 722 9 Max. Unit V V ns nC A ns nC A 5/13 Electrical characteristics STGW30N120KD 2.1 Electrical characteristics (curves) Figure 2. Output characteristics HV41160 Figure 3. Transfer characteristics HV41165 IC(A) IC(A) VGE=15V 120 14V 13V 12V 11V 120 VCE = 25V 90 90 60 60 30 10V 0 0 -5 5 10 15 20 25 30 VCE(V) 30 0 0 3 6 9 12 VGE (V) Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs. temperature Figure 6. Gate charge vs. gate-source voltage HV41190 Figure 7. Capacitance variations VGE (V) 16 VCE =960V IC =20A 12 8 4 0 0 20 40 60 80 100 Qg(nC) 6/13 STGW30N120KD Figure 8. Normalized gate threshold voltage vs. temperature Figure 9. Electrical characteristics Collector-emitter on voltage vs. collector current Figure 10. Normalized breakdown voltage vs. temperature Figure 11. Switching losses vs. temperature Figure 12. Switching losses vs. gate resistance Figure 13. Switching losses vs. collector current E (J) VCC = 780V VGE = 15V RG = 10 TJ = 125C HV41260 Eoff 4000 3000 2000 1000 Eon 0 0 5 10 15 20 IC (A) 7/13 Electrical characteristics Figure 14. Thermal Impedance Figure 15. Turn-off SOA STGW30N120KD Figure 16. Forward voltage drop vs forward current IFM(A) 100 90 80 70 60 50 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Tj=150C (maximum values) Tj=25C (maximum values) Tj=150C (typical values) VFM(V) 8/13 STGW30N120KD Test circuit 3 Test circuit Figure 18. Gate charge test circuit Figure 17. Test circuit for inductive load switching Figure 19. Switching waveform Figure 20. Diode recovery time waveform 9/13 Package mechanical data STGW30N120KD 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/13 STGW30N120KD Package mechanical data TO-247 Mechanical data mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 Dim. A A1 b b1 b2 c D E e L L1 L2 oP oR S 11/13 Revision history STGW30N120KD 5 Revision history Table 9. Date 29-Jan-2008 18-Jun-2008 Document revision history Revision 1 2 Initial release Update values in Table 2 Changes 12/13 STGW30N120KD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 13/13 |
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